LatticePower (Jiangxi) Corporation
CN-Welt-Pionier GaN-on-Silicon-LED since 2006 — UV-Curing/IR/General-Lighting from Nanchang, Nanchang-University-Spinout, 2016 National-Tech-Invention-Award.
About the company
LatticePower (Jiangxi) Corporation (晶能光电有限公司) is a Chinese LED-chip manufacturer and global pioneer of GaN-on-silicon LED technology. Founded February 2006 as a spinout of Nanchang University, HQ in Nanchang (Jiangxi, National High-Tech Industrial Development Zone, Aixi Lake). First company worldwide to commercialise high-performance GaN LEDs on silicon substrate (rather than sapphire) — advantages: better thermal characteristics, lower raw-material cost, larger wafer sizes. April 2008 production plant online. 2009 mid-low-power LED chip production. 2014 USD 80 m Round-A funding led by GSR Ventures. January 2016 the GaN-on-silicon LED technology (jointly developed with Nanchang University and CECEP Lattice Lighting Co. Ltd) received the 1st prize of China's National Technology Invention Award. UV activity: UVA LEDs for UV-curing applications as part of the broader portfolio (mobile, automotive, IR surveillance, TV backlighting, general lighting, AR/VR).
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Industry story · Lifecycle
- 01.02.2006 Founding
LatticePower founded as Nanchang University spinout (2006)
LatticePower (Jiangxi) Corporation was founded in February 2006 in Nanchang as spinout from Nanchang University, aiming to commercialize the universitys GaN-on-Silicon LED research. First company worldwide to industrialize this technology (instead of conventional sapphire substrates).
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- 01.04.2008 Launch
Silicon LED production plant online (2008)
In April 2008 LatticePower's first GaN-on-Silicon LED production plant in Nanchang went online — making LatticePower the first company worldwide with a commercial production line for Si-substrate LEDs.
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- 01.07.2014 Launch
USD 80M Series-A funding (2014)
In July 2014 LatticePower closed a USD 80M Series-A funding round, led by GSR Ventures. Capital used for scaling GaN-on-Silicon production capacity.
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- 08.01.2016 Regulatory
National Technology Invention Award 1st Prize for GaN-on-Si (2016)
In January 2016 the GaN-on-Silicon LED technology — co-developed by LatticePower, Nanchang University and CECEP Lattice Lighting Co. Ltd — received the 1st Prize of China's National Technology Invention Award. China's highest state-level recognition for technical innovation.
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